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TK10A60E,S5X

TK10A60E,S5X
Attēli ir tikai norādei
Daļas numurs
TK10A60E,S5X
Ražotājs
Toshiba
Kategorijas
MOSFET
RoHS
Datu lapas
TK10A60E,S5X
Apraksts
MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS
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Specifikācijas

Ražotājs
Toshiba
Kategorijas
MOSFET
Id - Continuous Drain Current
10 A
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
45 W
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
750 mOhms
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V

Porduct kategorija

Circuit Protection 162,445 Produkti Connectors 2,428,639 Produkti Electromechanical 556,105 Produkti Embedded Solutions 41,129 Produkti Enclosures 20,894 Produkti Engineering Development Tools 42,996 Produkti Industrial Automation 558,346 Produkti LED Lighting 77,795 Produkti Optoelectronics 109,177 Produkti Passive Components 2,996,719 Produkti Power 323,117 Produkti Semiconductors 567,247 Produkti Sensors 70,154 Produkti Test & Measurement 23,394 Produkti

Jaunākās atsauksmes

Uzrakstiet savu Reivew
Received, Fast shipping, not checked yet
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
packed pretty good, all is ok,-seller.
Perfectly.
I received the product right, thank you very much 2018/12/03 ★★★★★
Vairāk

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Cilvēki skatās TK10A60E,S5X, tad nopirka

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Saistītie atslēgvārdi TK10

  • TK10A60E,S5X Integrēta
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  • TK10A60E,S5X PDF datu lapa
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  • TK10A60E,S5X Izplatītājs
  • TK10A60E,S5X PDF
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  • TK10A60E,S5X Lejupielādēt PDF failu
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  • TK10A60E,S5X Piegāde
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  • TK10A60E,S5X Specifikācija
  • TK10A60E,S5X Karstie piedāvājumi
  • TK10A60E,S5X Break cena
  • TK10A60E,S5X Tehniskie dati

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