Daļas numurs TK100A10N1,S4X Ražotājs Toshiba Kategorijas MOSFET RoHS Datu lapas TK100A10N1,S4X Apraksts MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
Ražotājs Toshiba Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 100 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 45 W Qg - Gate Charge 140 nC Rds On - Drain-Source Resistance 3.1 mOhms Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V