Daļas numurs TK100E08N1,S1X Ražotājs Toshiba Kategorijas MOSFET RoHS Datu lapas TK100E08N1,S1X Apraksts MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
Ražotājs Toshiba Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 214 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 255 W Qg - Gate Charge 130 nC Rds On - Drain-Source Resistance 3.2 mOhms Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 80 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V