NP100P06PDG-E1-AY

Attēli ir tikai norādei

Daļas numurs: NP100P06PDG-E1-AY

Ražotājs: Renesas Electronics

Kategorijas: MOSFET

RoHS

Datu lapas: NP100P06PDG-E1-AY

Apraksts: MOSFET LOW VOLTAGE POWER MOSFET

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Specifikācijas

Ražotājs: Renesas Electronics

Kategorijas: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TO-263-3

Packaging: Tube

Pd - Power Dissipation: 200 W

Qg - Gate Charge: 300 nC

Rds On - Drain-Source Resistance: 6 mOhms

Technology: SI

Transistor Polarity: P-Channel

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew

Hello! Order received, very happy. Thank you very much!

Flavia

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

Thank You all fine, packed very well

Ulrich Bundke

Works. Find the price of this product is very good

Maxim Krasnov

Decent quality, not минвелл certainly, but enough decent

TEIXEIRA

Vairāk

Jums var patikt

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