Daļas numurs NP100P04PDG-E1-AY Ražotājs Renesas Electronics Kategorijas MOSFET RoHS Datu lapas NP100P04PDG-E1-AY Apraksts MOSFET LOW VOLTAGE POWER MOSFET
Ražotājs Renesas Electronics Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 100 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Tube Pd - Power Dissipation 1.8 W Rds On - Drain-Source Resistance 3.5 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V