Daļas numurs TK100L60W,VQ Ražotājs Toshiba Kategorijas MOSFET RoHS Datu lapas TK100L60W,VQ Apraksts MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
Ražotājs Toshiba Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 100 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PL-3 Packaging Tube Pd - Power Dissipation 797 W Qg - Gate Charge 360 nC Rds On - Drain-Source Resistance 15 mOhms Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V