Daļas numurs RQ3E120ATTB Ražotājs ROHM Semiconductor Kategorijas MOSFET RoHS Datu lapas RQ3E120ATTB Apraksts MOSFET -30V P-CHANNEL -12A
Ražotājs ROHM Semiconductor Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 12 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 62 nC Rds On - Drain-Source Resistance 61 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 39 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V