Daļas numurs RQ3E075ATTB Ražotājs ROHM Semiconductor Kategorijas MOSFET RoHS Datu lapas RQ3E075ATTB Apraksts MOSFET Pch -30V -18A Si MOSFET
Ražotājs ROHM Semiconductor Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 18 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 15 W Qg - Gate Charge 21 nC Rds On - Drain-Source Resistance 17.4 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V