Daļas numurs TP65H070LSG-TR Ražotājs Transphorm Kategorijas RF JFET Transistors RoHS Datu lapas TP65H070LSG-TR Apraksts RF JFET Transistors GAN FET 650V 25A PQFN88
Ražotājs Transphorm Kategorijas RF JFET Transistors Id - Continuous Drain Current 25 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case PQFN-8 Packaging Cut Tape, Reel Pd - Power Dissipation 96 W Technology GaN Transistor Polarity N-Channel Transistor Type HEMT Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Breakdown Voltage - 20 V, + 20 V