Daļas numurs RQ3G150GNTB Ražotājs ROHM Semiconductor Kategorijas MOSFET RoHS Datu lapas RQ3G150GNTB Apraksts MOSFET Nch 40V 30Aw Si MOSFET
Ražotājs ROHM Semiconductor Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 20 W Qg - Gate Charge 24.1 nC Rds On - Drain-Source Resistance 5.1 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V