Daļas numurs QH8KA2TCR Ražotājs ROHM Semiconductor Kategorijas MOSFET RoHS Datu lapas QH8KA2TCR Apraksts MOSFET 30V Nch+Nch Si MOSFET
Ražotājs ROHM Semiconductor Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 8.4 nC Rds On - Drain-Source Resistance 25 mOhms, 25 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V