UJ3C120040K3S

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Daļas numurs
UJ3C120040K3S
Ražotājs
UnitedSiC
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 1200V/40mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth

Specifikācijas

Ražotājs
UnitedSiC
Kategorijas
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
65 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
429 W
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
45 mOhms
Technology
SiC
Tradename
SiC FET
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage
4 V

Jaunākās atsauksmes

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

the photo in comparison with cheap. Delivery fast

Great product. Arrived ahead of time. Thank you

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