Daļas numurs TK040N65Z,S1F Ražotājs Toshiba Kategorijas MOSFET RoHS Datu lapas TK040N65Z,S1F Apraksts MOSFET Power MOSFET 57A 360W 650V
Ražotājs Toshiba Kategorijas MOSFET Channel Mode Enhancement Id - Continuous Drain Current 57 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 360 W Qg - Gate Charge 105 nC Rds On - Drain-Source Resistance 40 mOhms Technology SI Tradename DTMOSVI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V