- Daļas numurs
- IKD04N60RC2ATMA1
- Ražotājs
- Infineon Technologies
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors HOME APPLIANCES 14
IKD04N60RC2ATMA1
Attēli ir tikai norādei
Specifikācijas
- Ražotājs
- Infineon Technologies
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.4 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 8 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- PG-TO252-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 36.6 W
- Series
- Trenchstop RC
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Jaunākās atsauksmes
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Everything is excellent! recommend this seller!
Stoyan Chaykov
fast delivery
Mike Ibarra
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Jums var patikt
Cilvēki skatās IKD04N60RC2ATMA1, tad nopirka
IKD04N60RC2ATMA1 Jaunumi
03/14/2023
03/13/2023
03/09/2023
Saistītie atslēgvārdi IKD0
- IKD04N60RC2ATMA1 Integrēta
- IKD04N60RC2ATMA1 RoHS
- IKD04N60RC2ATMA1 PDF datu lapa
- IKD04N60RC2ATMA1 Datu lapas
- IKD04N60RC2ATMA1 Daļa. \ T
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- IKD04N60RC2ATMA1 PDF
- IKD04N60RC2ATMA1 Komponents
- IKD04N60RC2ATMA1 IC
- IKD04N60RC2ATMA1 Lejupielādēt PDF failu
- IKD04N60RC2ATMA1 Lejupielādēt datu lapu
- IKD04N60RC2ATMA1 Piegāde
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- IKD04N60RC2ATMA1 Datu lapas
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- IKD04N60RC2ATMA1 Specifikācija
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- IKD04N60RC2ATMA1 Tehniskie dati
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