Daļas numurs IKFW50N60ETXKSA1 Ražotājs Infineon Technologies Kategorijas IGBT Transistors RoHS Datu lapas IKFW50N60ETXKSA1 Apraksts IGBT Transistors INDUSTRY 14
Ražotājs Infineon Technologies Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 73 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 164 W Series Trenchstop IGBT3 Technology SI