Daļas numurs IKA10N65ET6XKSA2 Ražotājs Infineon Technologies Kategorijas IGBT Transistors RoHS Datu lapas IKA10N65ET6XKSA2 Apraksts IGBT Transistors HOME APPLIANCES 14
Ražotājs Infineon Technologies Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 15 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220FP-3 Packaging Tube Pd - Power Dissipation 40 W Series Trenchstop IGBT6 Technology SI