Daļas numurs IKFW50N60DH3XKSA1 Ražotājs Infineon Technologies Kategorijas IGBT Transistors RoHS Datu lapas IKFW50N60DH3XKSA1 Apraksts IGBT Transistors INDUSTRY 14
Ražotājs Infineon Technologies Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.85 V Configuration Single Continuous Collector Current at 25 C 53 A Maximum Gate Emitter Voltage 30 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO247-3 Packaging Tube Pd - Power Dissipation 145 W Series Trenchstop High Speed 3 Technology SI