Daļas numurs IKB40N65EF5ATMA1 Ražotājs Infineon Technologies Kategorijas IGBT Transistors RoHS Datu lapas IKB40N65EF5ATMA1 Apraksts IGBT Transistors INDUSTRY 14
Ražotājs Infineon Technologies Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current at 25 C 74 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, Reel Pd - Power Dissipation 250 W Series Trenchstop IGBT5 Technology SI