Daļas numurs FD150R12RT4 Ražotājs Infineon Technologies Kategorijas IGBT Modules RoHS Datu lapas FD150R12RT4 Apraksts IGBT Modules IGBT 1200V 150A
Ražotājs Infineon Technologies Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.15 V Continuous Collector Current at 25 C 150 A Gate-Emitter Leakage Current 100 nA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Packaging Tray Pd - Power Dissipation 790 W