Daļas numurs 2SA1182-Y,LF Ražotājs Toshiba Kategorijas Bipolar Transistors - BJT RoHS Datu lapas 2SA1182-Y,LF Apraksts Bipolar Transistors - BJT Bias Resistor Built-in transistor
Ražotājs Toshiba Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO - 35 V Collector- Emitter Voltage VCEO Max - 30 V Collector-Emitter Saturation Voltage - 0.25 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 200 MHz Maximum DC Collector Current - 500 mA Mounting Style SMD/SMT Package / Case TO-236MOD-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Qualification AEC-Q101 Series 2SA1182 Transistor Polarity PNP