Overview and characteristics of domestic SRAM chip EMI501HB08PM45I

In the past few decades, the SRAM field has been divided into two different product series, fast and low power consumption, each product has its own function, application, and price. The device that uses SRAM needs its high-speed or low-power consumption, but it cannot take both into consideration at the same time. But people increasingly need high-performance devices with low power consumption to perform complex operations while running on portable power sources. This demand is driven by a new generation of medical equipment and handheld devices, consumer electronics and communication systems, and industrial controllers, all of which are driven by the Internet of Things.

The following introduces a domestic SRAM chip EMI501HB08PM45I compatible with IS63WV1288DBLL-8TLI.

EMI501HB08PM45I description

EMI501HB08PM45I asynchronous low-power SRAM is manufactured by EMI's advanced full CMOS process technology. The bit width is 128k x 8bit, supports industrial temperature range, and the working output voltage is 4.5V~5.5V, in order to realize the flexible design of the system. It also supports low data retention voltage for battery backup operation with a low data retention current.

Features of EMI501HB08PM45I

• Process technology: 90nm full CMOS

• Organization: 128k x 8bit

• Power supply voltage: 4.5V~5.5V

• Three-state output and TTL compatible

• Standard 32SOP.

• Industrial operating temperature.

Low-power SRAM memory is used in products that have battery power and are very sensitive to power consumption. As a category of static random access memory, SRAM, as the most important semiconductor memory, is widely embedded in high-performance microprocessors. With the continuous improvement of integrated circuit manufacturing technology, the memory occupies an increasing proportion of the power consumption of the chip, and the design of high-speed and low-power SRAM becomes more and more important.